Electronics manufacturing sector focused on semiconductors - Infineon announces groundbreaking advancement in significant semiconductor substance.
Infineon, located close to Munich in Neubiberg, has managed to manufacture this material on 300-millimeter wafers, making them the first company globally to accomplish this feat. This achievement has got Infineon optimistic about a notable increase in sales of these components, which are essential for powering devices, while also playing a crucial role in AI servers, solar power installations, and electric vehicles.
Infineon CEO Jochen Hanebeck expressed his excitement, stating, "This technological breakthrough is set to revolutionize the industry. Currently, we're the only ones capable of producing Gallium Nitride (GaN) on 300-millimeter wafers. Some competitors are still on 150 millimeters, with plans to move to 200 millimeters, where Infineon is already established. The difference is more significant than it appears at first glance: 2.3 times more semiconductors can be produced from a 300-millimeter wafer compared to a 200-millimeter disc."
Potential for Cost Reductions
"The shift to 300-millimeter manufacturing unlocks new potentials in productivity and costs," emphasized Hanebeck. "We also benefit from the fact that we can process large GaN wafers on existing silicon equipment after implementing specific adjustments for these wafers. This allows us to capitalize on the productivity we've cultivated over decades."
Hanebeck predicts that GaN market prices will align with silicon prices in the near future. Larger wafers will accelerate this trend and encourage the usage of GaN. "This will contribute to the growth of the GaN market, and we anticipate holding a sizable share of it."
The production, which will ramp up in the coming years, will take place at Infineon's Austrian site in Villach, where the development also took place. Hanebeck explained the challenges involved in the new development: "Gallium Nitride grows on a classic silicon disc. The challenge lies in the fact that the two materials have different crystal structures - and the larger the disc, the higher the tension. With a 300-millimeter wafer, it's like having four elephants on a penny."
In light of Infineon's capabilities in manufacturing Gallium Nitride (GaN) on 300-millimeter wafers, electric mobility companies could potentially benefit from cost reductions due to increased efficiency and productivity. With the potential alignment of GaN market prices with silicon prices, electric vehicles equipped with Infineon's components might become more affordable, thereby encouraging wider adoption of electric mobility.
